A comparative transport study of Bi2Se3 and Bi2Se3/yttrium iron garnet
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چکیده
Articles you may be interested in Aging and reduced bulk conductance in thin films of the topological insulator Bi2Se3 Comment on " The role of Bi3+ ions in magneto-optic Ce and Bi comodified epitaxial iron garnet films " [Appl. The role of Bi 3 + ions in magneto-optic Ce and Bi comodified epitaxial iron garnet films Appl.
منابع مشابه
Synthesis of Iron Yttrium Garnet Nanoparticles by Reverse Microemulsion Method
Colloidal nanodispersion of Iron Yttrium Garnet has been preparedbymixing the two ternary mixture of Triton X-100 (surfactant), n-heptane and aqueous solution that differing only in the aqueous phase.Ethanolwas added as cosurfactant and mixed them by ultrasound bath. By mixing these twomicroemulsions, Iron Yttrium garnet (Y3 Fe5 O12) nanodispersionwas obtained. Solids were settled by centrifuge...
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A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume ...
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Recently, topological insulators (Bi2Se3, Bi2Te3 and Sb2Te3) have attracted much attention because of their bulk band gap (0.3 eV) and spin-polarized surface states with conductive massless Dirac Fermions [1]. Interestingly, Bi2Se3 has rhombohedral crystal structure which consists of Se or Bi lattices in stacked manner with the sequence of Se-Bi-Se-Bi-Se. This forms a sheet-like structure in wh...
متن کاملDemonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure
In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLs Bi2Te3. All three films are grown on insulating sapphire (0001) substrates by molecular beam epitaxy (...
متن کاملرشد بلور (Bi2Te3)0.96(Bi2Se3)0.04 به روش رشد ناحیهای و بررسی تغییرات شیمیایی ترکیب در راستای رشد
The (Bi2Te3)0.96(Bi2Se3)0.04 is an n-type thermoelectric semiconductor for using in thermoelectric cooling systems. Single crystal of this composition was grown by Zone Melting Method and thermoelectric power (α 2 σ) along the crystal growth where α is the Seebeck coefficient and σ is the electrical conductivity was measured. In this measurement a gradient along length of the prepared crystalli...
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